aotf600a60l/aot600a60l/AOB600A60L 600v, a mos5 tm n-channel power transistor general description product summary v ds @ t j,max 700v i dm 32a r ds(on),max < 0.6 q g,typ 11.5nc e oss @ 400v 1.8m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction temperatur e. repetitive avalanche energy c mj pulsed drain current c avalanche current c 32 1.3 a c mj 19 thermal characteristics parameter 300 t c =25c single pulsed avalanche energy g 20 power dissipation b dv/dt units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c package type ? proprietary a mos5 tm technology ? low r ds(on) ? optimized switching parameters for better emi performance ? enhanced body diode for robustness and fast reverse recovery ? smps with pfc, flyback and llc topologies ? silver atx ,adapter, tv, lighting, server power 100 v/ns parameter drain-source voltage aotf600a60l to220f green tube i d a 1.6 t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted v 1000 600 orderable part number form minimum order quantity 20 v units w w/c aot(b)600a60l aotf600a60l 8 8* 5 5* 27.5 96 0.8 0.2 c/w c/w maximum junction-to-ambient a,d maximum junction-to-case 65 65 0.5 --- 1.3 4.6 maximum case-to-sink a aot(b)600a60l aotf600a60l aot600a60l to220 green tube 1000 AOB600A60L to263 green tape &reel 800 gate-source voltage peak diode recovery dv/dt mosfet dv/dt ruggedness derate above 25c p d continuous drain current g d s g d s to - 220f aotf600a60l g d s to - 220 aot600a60l to - 263 d 2 pak d s g AOB600A60L rev.2.0: may 2019 www.aosmd.com page 1 of 6 downloaded from: http:///
aotf600a60l/aot600a60l/AOB600A60L symbol min typ max units 600 700 bv dss /?tj 0.59 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3.5 v r ds(on) 0.53 0.6 g fs 4.2 s v sd 0.8 1.2 v i s 8 a i sm 32 a c iss 608 pf c oss 19 pf c o(er) 21 pf c o(tr) 76 pf c rss 1.3 pf r g 4.6 q g 11.5 nc q gs 3.2 nc q gd 2.8 nc t d(on) 18 ns t r 5.5 ns t d(off) 36 ns t f 16 ns t rr 159 ns i rm 13 a q rr 1.2 m c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =20v gate-body leakage current v gs =10v, v ds =480v, i d =2.1a total gate charge gate source charge gate drain charge switching parameters i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =2.1a,v gs =0v v ds =10v, i d =2.1a v gs =10v, i d =2.1a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters v gs =10v, v ds =400v, i d =2.1a, r g =5 w turn-on rise time turn-on delaytime peak reverse recovery current i f =2.1a, di/dt=100a/ m s, v ds =400v body diode reverse recovery charge body diode reverse recovery time turn-off delaytime turn-off fall time a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperatur e t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained us ing <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =0.8a, r g =25 ?, starting t j =25 c. h. c o(er) is a fixed capacitance that gives the same stored ener gy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.2.0: may 2019 www.aosmd.com page 2 of 6 downloaded from: http:///
aotf600a60l/aot600a60l/AOB600A60L typical electrical and thermal characteristics 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e - 04 1e - 03 1e - 02 1e - 01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 0.5 1 1.5 2 2.5 3 - 100 - 50 0 50 100 150 200 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2.1a v gs =10v 0 3 6 9 12 15 0 4 8 12 16 20 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6v 6.5v 10v 7v 0.7 0.8 0.9 1 1.1 1.2 1.3 - 100 - 50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5: break down vs. junction temparature 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =10v 25 c 125 c rev.2.0: may 2019 www.aosmd.com page 3 of 6 downloaded from: http:///
aotf600a60l/aot600a60l/AOB600A60L typical electrical and thermal characteristics 0 3 6 9 12 15 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 10 100 1000 10000 0 100 200 300 400 500 600 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =2.1a 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for aotf600a60l (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 1 2 3 4 5 0 100 200 300 400 500 600 eoss (uj) v ds (volts) figure 9: coss stored energy e oss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for aot(b)600a60l (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s rev.2.0: may 2019 www.aosmd.com page 4 of 6 downloaded from: http:///
aotf600a60l/aot600a60l/AOB600A60L typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal impedance for aotf600a6 0l (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal impedance for aot(b)600a60l (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.2.0: may 2019 www.aosmd.com page 5 of 6 downloaded from: http:///
aotf600a60l/aot600a60l/AOB600A60L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.2.0: may 2019 www.aosmd.com page 6 of 6 downloaded from: http:///
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